1 cghv60075d5 75 w, 6.0 ghz, gan hemt die crees cghv60075d5 is a gallium nitride (gan) high electron mobility transistor (hemt). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. gan hemts offer greater power density and wider bandwidths compared to si and gaas transistors. features ? 19 db typical small signal gain at 4 ghz ? 17 db typical small signal gain at 6 ghz ? 65% typical power added effciency at 4 ghz ? 60% typical power added effciency at 6 ghz ? 75 w typical p sat ? 50 v operation ? high breakdown voltage ? up to 6 ghz operation applications ? 2-way private radio ? broaband amplifers ? cellular infrastructure ? test instrumentation ? class a, ab, linear amplifers suitable for ofdm, w-cdma, edge, cdma waveforms packaging information ? bare die are shipped on tape or in gel-pak? containers. ? non-adhesive tacky membrane immobilizes die during shipment. re v 1.1 C septe mbe r 2016 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 150 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum drain current 1 i max 6.3 a 25?c maximum forward gate current i gmax 10 ma 25?c thermal resistance, junction to case (packaged) 2 r jc 2.67 ?c/w 85?c, 41.6w dissipation thermal resistance, junction to case (die only) r jc 1.66 ?c/w 85?c, 41.6w dissipation mounting temperature t s 320 ?c 30 seconds note 1 current limit for long term reliable operation. note 2 eutectic die attach using 80/20 ausn mounted to a 10 mil thick cu15mo85 carrier. electrical characteristics (frequency = 6 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate pinch-off voltage v p -3.8 -3.0 C2.3 v v ds = 10 v, i d = 10 ma drain current 1 i dss 8 10 C a v ds = 6 v, v gs = 2.0 v drain-source breakdown voltage v bd 150 C C v v gs = -8 v, i d = 10 ma on resistance r on C 0.28 C ? v ds = 0.1 v gate forward voltage v g-on C 1.9 C v i gs = 10 ma rf characteristics small signal gain g ss C 17 C db v dd = 50 v, i dq = 125 ma saturated power output 2,3 p sat C 75 C w v dd = 50 v, i dq = 125 ma drain effciency 3 C 60 C % v dd = 50 v, i dq = 125 ma, p sat = 75 w intermodulation distortion im3 C -30 C dbc v dd = 50 v, i dq = 125 ma, p out = 75 w pep output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 125 ma p out = 75 w cw dynamic characteristics input capacitance c gs C 9.51 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 3.6 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.26 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 scaled from pcm data 2 p sat is defned as i g = 1.0 ma. 3 drain effciency = p out / p dc cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 3000 x 820 (+0/-50) microns, die thickness 100 microns. all gate and drain pads must be wire bonded for electrical connection. assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at www.cree.com/rf/document-library ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance figure 1. - cghv60075d5 g max and k factor vs. frequency at tcase = 25c v dd = 50v, i dq = 125 ma product ordering information order number description unit of measure cghv60075d5 bare die each figure 2. - cghv60075d g max and k factor vs. frequency at tcase = 25c v dd = 50v, i dq = 125ma cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical die s-parameters (small signal, v ds = 50 v, i dq = 125 ma, magnitude / angle) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 0.5 0.93309 -154.44 14.266 88.053 0.014402 -0.85181 0.35448 -119.95 0.6 0.93352 -158.34 11.838 83.444 0.01433 -5.2391 0.3779 -122.32 0.7 0.93452 -161.14 10.06 79.434 0.014195 -9.0268 0.40373 -124.1 0.8 0.93586 -163.24 8.7019 75.832 0.014019 -12.407 0.43075 -125.62 0.9 0.93743 -164.87 7.6297 72.531 0.013813 -15.485 0.45814 -127.01 1 0.93917 -166.17 6.761 69.468 0.013583 -18.326 0.48532 -128.36 1.1 0.94101 -167.24 6.0431 66.6 0.013336 -20.972 0.51193 -129.69 1.2 0.94292 -168.13 5.4398 63.9 0.013076 -23.449 0.5377 -131 1.3 0.94485 -168.89 4.926 61.348 0.012806 -25.779 0.56247 -132.31 1.4 0.9468 -169.55 4.4834 58.931 0.01253 -27.974 0.58611 -133.6 1.5 0.94872 -170.12 4.0987 56.635 0.012249 -30.047 0.60859 -134.86 1.6 0.95062 -170.64 3.7616 54.451 0.011966 -32.007 0.62986 -136.11 1.7 0.95247 -171.1 3.4641 52.373 0.011683 -33.861 0.64994 -137.32 1.8 0.95426 -171.51 3.2003 50.392 0.011401 -35.619 0.66885 -138.51 1.9 0.956 -171.89 2.9648 48.503 0.011122 -37.283 0.68662 -139.66 2 0.95767 -172.24 2.7539 46.699 0.010846 -38.863 0.70331 -140.77 2.1 0.95926 -172.56 2.5641 44.976 0.010574 -40.36 0.71895 -141.85 2.2 0.96079 -172.86 2.3927 43.33 0.010307 -41.781 0.73359 -142.89 2.3 0.96225 -173.14 2.2375 41.754 0.010045 -43.13 0.74731 -143.9 2.4 0.96364 -173.41 2.0963 40.247 0.0097893 -44.411 0.76014 -144.87 2.5 0.96496 -173.65 1.9677 38.802 0.0095396 -45.629 0.77216 -145.8 2.6 0.96621 -173.89 1.8502 37.416 0.0092961 -46.787 0.78341 -146.7 2.7 0.9674 -174.11 1.7425 36.087 0.0090588 -47.888 0.79393 -147.57 2.8 0.96853 -174.32 1.6437 34.811 0.0088279 -48.935 0.80379 -148.4 2.9 0.96959 -174.52 1.5528 33.584 0.0086033 -49.933 0.81303 -149.2 3 0.9706 -174.71 1.4689 32.404 0.0083851 -50.882 0.82169 -149.97 3.2 0.97246 -175.07 1.3198 30.177 0.0079668 -52.647 0.83741 -151.43 3.4 0.97412 -175.4 1.1918 28.105 0.0075724 -54.252 0.85128 -152.78 3.6 0.97561 -175.71 1.081 26.175 0.0072005 -55.712 0.86354 -154.03 3.8 0.97695 -175.99 0.98461 24.373 0.0068495 -57.041 0.87439 -155.19 4 0.97815 -176.26 0.90032 22.681 0.0065185 -58.254 0.88404 -156.27 4.2 0.97923 -176.5 0.82619 21.091 0.0062057 -59.361 0.89265 -157.28 4.4 0.9802 -176.74 0.76072 19.592 0.0059099 -60.372 0.90034 -158.21 4.6 0.98108 -176.96 0.70262 18.175 0.0056299 -61.295 0.90725 -159.09 4.8 0.98187 -177.17 0.65085 16.832 0.0053644 -62.137 0.91345 -159.91 5 0.98259 -177.36 0.60454 15.558 0.0051122 -62.903 0.91905 -160.68 5.2 0.98324 -177.55 0.56297 14.343 0.0048724 -63.603 0.92411 -161.41 5.4 0.98383 -177.73 0.52552 13.185 0.0046441 -64.237 0.9287 -162.09 5.6 0.98437 -177.91 0.49168 12.078 0.0044262 -64.81 0.93287 -162.73 5.8 0.98487 -178.07 0.46099 11.017 0.0042182 -65.327 0.93667 -163.34 6 0.98532 -178.23 0.4331 9.9987 0.0040191 -65.79 0.94015 -163.92 to download the s-parameters in s2p format, go to the cghv60075d5 product page and click the documentation tab. cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 part number system parameter value units upper frequency 1 6.0 ghz power output 75 w package bare die - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. die power output (w) upper frequency (ghz) cree gan high voltage cghv60075d5 cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, nc 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv60075d5 rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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